 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| geometry process details principal device types cbcp69 cbcx69 czt751 mps750 mps751 gross die per 5 inch wafer 10,583 process CP714V small signal transistor pnp - high current transistor chip process epitaxial planar die size 40 x 40 mils die thickness 7.0 mils base bonding pad area 7.9 x 8.7 mils emitter bonding pad area 9.0 x 14 mils top side metalization al - 30,000? back side metalization au - 18,000? www.centralsemi.com r0 (17-november 2010)
process CP714V typical electrical characteristics www.centralsemi.com r0 (17-november 2010) |
Price & Availability of CP714V
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |